Manufacturer Part Number
ISL6622CRZ
Manufacturer
Renesas Electronics America
Introduction
The ISL6622CRZ is a high-performance gate driver IC designed for driving N-channel MOSFET power switches in half-bridge topologies. It provides high-side and low-side gate drive signals with integrated bootstrap diode and charge pump for the high-side driver.
Product Features and Performance
Dual N-channel MOSFET gate driver
Capable of driving power MOSFETs in half-bridge configurations
Integrated bootstrap diode and charge pump for high-side gate drive
8V to 13.2V operating supply voltage range
25A peak source and 2A peak sink current capabilities
26ns typical rise time and 18ns typical fall time
0°C to 125°C operating temperature range
Surface mount 10-VFDFN exposed pad package
Product Advantages
Efficient and reliable MOSFET driving
Integrated bootstrap circuit simplifies design
Robust performance across wide temperature range
Compact surface mount package
Key Reasons to Choose This Product
Optimized for high-efficiency, high-performance power conversion applications
Proven reliability and performance in a wide range of power electronics designs
Simplifies power stage design with integrated bootstrap circuit
Cost-effective solution for high-volume applications
Quality and Safety Features
Designed and manufactured to high quality standards
Robust overcurrent and overtemperature protection features
Compatibility
The ISL6622CRZ is a discontinued product. Customers should contact the Renesas sales team for information on alternative or equivalent models that may be available.
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control systems
Automotive electronics
Product Lifecycle
The ISL6622CRZ is an obsolete product. Customers should contact our website's sales team for information on alternative or equivalent models that may be available.