ISL6613AEIBZ - Renesas Electronics America Inc

Manufacturer Part Number

ISL6613AEIBZ

Manufacturer

renesas-electronics-america

Introduction

The ISL6613AEIBZ is a high-performance, dual-channel gate driver IC designed for half-bridge power conversion applications. It provides high-side and low-side gate drive signals to control N-channel power MOSFET switches in a variety of power conversion topologies.

Product Features and Performance

Dual-channel gate driver with independent high-side and low-side outputs

Capable of driving N-channel power MOSFETs

Operating voltage range of 10.8V to 13.2V

Peak output current of 1.25A source and 2A sink

Fast rise and fall times of 26ns and 18ns respectively

Wide operating temperature range of -40°C to 125°C

Product Advantages

Enables efficient and reliable power conversion in a wide range of applications

Optimized for fast switching to improve overall system efficiency

Robust design to withstand harsh operating conditions

Key Reasons to Choose This Product

High-performance gate drive solution for demanding power conversion applications

Efficient power conversion through fast switching capabilities

Reliable operation across wide temperature range

Quality and Safety Features

Rigorous quality control and testing processes

Designed to meet industry safety and regulatory standards

Compatibility

Suitable for use with N-channel power MOSFETs in half-bridge power conversion topologies

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and medical equipment

Product Lifecycle

["This product is obsolete and nearing the end of its lifecycle.","Customers are advised to contact our website's sales team for information on equivalent or alternative models available."]