Manufacturer Part Number
IDT71V424S12Y
Manufacturer
Renesas Electronics America
Introduction
The IDT71V424S12Y is a high-performance, low-power 4Mbit Asynchronous SRAM (Static Random Access Memory) device. It offers a parallel interface and is designed for a wide range of applications, including embedded systems, industrial automation, and telecommunications equipment.
Product Features and Performance
Memory Size: 4Mbit
Memory Organization: 512K x 8
Memory Interface: Parallel
Write Cycle Time Word, Page: 12ns
Access Time: 12ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Product Advantages
High-performance with fast read/write access times
Low-power operation
Parallel interface for easy integration
Wide operating voltage range
Extended temperature range
Key Reasons to Choose This Product
Reliable and proven SRAM technology from a trusted manufacturer
Suitable for a variety of applications that require fast, low-power memory
Ease of integration with parallel interface
Robust performance within the specified temperature and voltage range
Quality and Safety Features
Surface mount packaging for reliable connections
Rigorous testing and quality control processes
Compatibility
Parallel interface allows for easy integration with a wide range of microcontrollers and processors
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Other applications requiring high-performance, low-power SRAM
Product Lifecycle
["The IDT71V424S12Y is an obsolete product, meaning it is no longer in active production.","There may be equivalent or alternative SRAM models available from Renesas Electronics America or other manufacturers. Customers are advised to contact our website's sales team for more information on current product offerings."]
IDT71V424S15YGIDT (Renesas Electronics Corporation)