Manufacturer Part Number
IDT71V424L10Y
Manufacturer
Renesas Electronics America
Introduction
The IDT71V424L10Y is a high-performance 4Mbit Asynchronous SRAM (Static Random Access Memory) from Renesas Electronics America. It offers a compact 36-BSOJ package and supports a wide operating voltage range of 3V to 3.6V, making it suitable for a variety of embedded applications.
Product Features and Performance
4Mbit memory capacity with 512K x 8 organization
Asynchronous SRAM technology for fast data access
10ns write cycle time and 10ns access time
Parallel memory interface
3V to 3.6V operating voltage range
0°C to 70°C operating temperature range
Surface mount 36-BSOJ (0.400", 10.16mm Width) package
Product Advantages
High-density SRAM solution in a compact package
Wide operating voltage range for flexible system design
Fast access and write cycle times for efficient data processing
Reliable operation across extended temperature range
Key Reasons to Choose This Product
High-performance SRAM to meet the demands of modern embedded systems
Compact package and low power consumption for space-constrained designs
Dependable operation in a variety of environmental conditions
Proven reliability and quality from a trusted semiconductor manufacturer
Quality and Safety Features
Rigorously tested to ensure consistent performance and reliability
Compliant with industry safety and environmental standards
Compatibility
The IDT71V424L10Y is designed to be compatible with a wide range of embedded systems and microcontrollers that require high-speed, high-density SRAM.
Application Areas
Embedded systems
Industrial control and automation
Networking and telecommunications equipment
Consumer electronics
Medical devices
Product Lifecycle
The IDT71V424L10Y is an obsolete product, meaning it has been discontinued by the manufacturer. Customers should contact our website's sales team or their authorized distributors for information on alternative or equivalent memory solutions that may be available.