IDT71V416L10PH - Renesas Electronics America Inc

Manufacturer Part Number

IDT71V416L10PH

Manufacturer

Renesas Electronics America

Introduction

The IDT71V416L10PH is a high-performance 4Mbit SRAM device featuring asynchronous technology and a parallel memory interface.

Product Features and Performance

-4Mbit memory size

-Organized as 256K x 16

-Asynchronous SRAM technology

-Parallel memory interface

-Volatile memory type

-Access time and write cycle time of 10 ns

-Supports supply voltages from 3V to 3.6V

Product Advantages

-High-speed access and fast write capabilities

-Compact 44-TSOP II package suitable for surface mounting

-Supports a broad range of operating temperatures from 0°C to 70°C

Key Technical Parameters

-Memory Size: 4Mbit

-Memory Organization: 256K x 16

-Write Cycle Time - Word, Page: 10ns

-Access Time: 10 ns

-Voltage - Supply: 3V ~ 3.6V

-Operating Temperature: 0°C ~ 70°C (TA)

Quality and Safety Features

-Operates within a standard temperature range ensuring reliability

-Stable performance under varying power supply conditions within 3V to 3.6V

Compatibility

-Compatible with systems requiring a parallel memory interface and a 44-TSOP II package for surface mount.

Application Areas

-Suitable for applications requiring high-speed data access and temporary data storage, such as computing, embedded processing, and telecommunications.

Product Lifecycle

-This product is marked as Obsolete

-Please consult Renesas Electronics America for available replacements or upgrades

Several Key Reasons to Choose This Product

-High memory capacity of 4Mbit for extensive data storage

-Fast access and write times of 10ns ideal for performance-critical applications

-Supports a practical range of supply voltages for flexibility in system design

-Available in a compact surface-mount package, facilitating easy integration into various designs

-Operational across a broad temperature spectrum, enhancing its suitability for diverse operational environments.