Manufacturer Part Number
IDT71V416L10PH
Manufacturer
Renesas Electronics America
Introduction
The IDT71V416L10PH is a high-performance 4Mbit SRAM device featuring asynchronous technology and a parallel memory interface.
Product Features and Performance
-4Mbit memory size
-Organized as 256K x 16
-Asynchronous SRAM technology
-Parallel memory interface
-Volatile memory type
-Access time and write cycle time of 10 ns
-Supports supply voltages from 3V to 3.6V
Product Advantages
-High-speed access and fast write capabilities
-Compact 44-TSOP II package suitable for surface mounting
-Supports a broad range of operating temperatures from 0°C to 70°C
Key Technical Parameters
-Memory Size: 4Mbit
-Memory Organization: 256K x 16
-Write Cycle Time - Word, Page: 10ns
-Access Time: 10 ns
-Voltage - Supply: 3V ~ 3.6V
-Operating Temperature: 0°C ~ 70°C (TA)
Quality and Safety Features
-Operates within a standard temperature range ensuring reliability
-Stable performance under varying power supply conditions within 3V to 3.6V
Compatibility
-Compatible with systems requiring a parallel memory interface and a 44-TSOP II package for surface mount.
Application Areas
-Suitable for applications requiring high-speed data access and temporary data storage, such as computing, embedded processing, and telecommunications.
Product Lifecycle
-This product is marked as Obsolete
-Please consult Renesas Electronics America for available replacements or upgrades
Several Key Reasons to Choose This Product
-High memory capacity of 4Mbit for extensive data storage
-Fast access and write times of 10ns ideal for performance-critical applications
-Supports a practical range of supply voltages for flexibility in system design
-Available in a compact surface-mount package, facilitating easy integration into various designs
-Operational across a broad temperature spectrum, enhancing its suitability for diverse operational environments.
IDT71V3579S75BQIDT (Renesas Electronics Corporation)