Manufacturer Part Number
IDT71V35761S200PF
Manufacturer
renesas-electronics-america
Introduction
The IDT71V35761S200PF is a high-performance, low-power 4.5Mbit synchronous static random access memory (SRAM) device. This SRAM offers a unique combination of high speed, low power, and advanced features, making it an ideal solution for a wide range of applications, including telecommunications, networking, industrial, and consumer electronics.
Product Features and Performance
5Mbit of synchronous SRAM memory
128K x 36-bit organization
200 MHz clock frequency
1 ns access time
135V to 3.465V operating voltage
0°C to 70°C operating temperature range
Low power consumption
Product Advantages
High-speed performance for demanding applications
Low power operation for extended battery life
Reliable and robust design for industrial and harsh environments
Flexible interface and packaging options
Key Reasons to Choose This Product
Unparalleled speed and efficiency for time-critical applications
Proven reliability and durability for industrial and commercial use
Versatile compatibility and ease of integration
Cost-effective solution for a wide range of memory requirements
Quality and Safety Features
Rigorous testing and quality control measures
Compliance with industry safety standards and regulations
Compatibility
The IDT71V35761S200PF is designed to be compatible with a variety of electronic systems and applications, including:
Telecommunications equipment
Networking devices
Industrial automation and control systems
Consumer electronics
Application Areas
Telecommunications and networking equipment
Industrial automation and control systems
Embedded systems and applications
Consumer electronics and devices
Product Lifecycle
The IDT71V35761S200PF is an obsolete product, meaning it is no longer in production. However, there may be equivalent or alternative models available from Renesas Electronics America or other manufacturers. Customers are advised to contact our website's sales team for more information on available options and potential replacements.