Manufacturer Part Number
IDT71016S15PH
Manufacturer
Renesas Electronics America
Introduction
High-speed 1Mbit SRAM memory device for various electronic applications
Product Features and Performance
High-speed SRAM with parallel interface
Asynchronous access
1Mbit memory size with a 64K x 16 organization
Short write cycle time of 15ns
Access time also 15ns for quick data retrieval
Operating temperature range from 0°C to 70°C
Product Advantages
Provides fast read/write operations for performance-critical applications
Consistent performance across a wide range of temperatures
Compatible with various microprocessors due to parallel memory interface
Key Technical Parameters
Memory Type: Volatile SRAM Asynchronous
Memory Size: 1Mbit
Memory Organization: 64K x 16
Write Cycle Time Word, Page: 15ns
Access Time: 15ns
Voltage Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Compliant with industry safety and quality standards for reliable operation
Compatibility
Designed for devices with a parallel memory interface
Can integrate with systems requiring high-speed data access and storage
Application Areas
Embedded systems
Telecommunications
Computing
Industrial electronics
Product Lifecycle
Obsolete product status
Potential for replacements or upgrades should be verified with the manufacturer
Several Key Reasons to Choose This Product
Fast access and write times make it suitable for performance-intensive applications
The reliable operation within a 0°C to 70°C temperature range ensures versatility in different environments
Parallel interface allows integration with a wide variety of microprocessor or digital systems
Provided by Renesas, a reputable manufacturer in the semiconductor industry.
IDT70V9349L7PFI8IDT (Renesas Electronics Corporation)