Manufacturer Part Number
IDT6116LA35SO
Manufacturer
Renesas Electronics America
Introduction
The IDT6116LA35SO is a high-performance, low-power 16Kbit SRAM device designed for a wide range of applications. It features asynchronous operation, parallel memory interface, and operates at a supply voltage of 4.5V to 5.5V.
Product Features and Performance
16Kbit SRAM memory capacity
2K x 8 memory organization
Asynchronous SRAM technology
Parallel memory interface
35ns write cycle time (word, page)
35ns access time
5V to 5.5V supply voltage
0°C to 70°C operating temperature range
Surface mount 24-SOIC package
Product Advantages
High-performance SRAM with low power consumption
Wide operating voltage and temperature range
Parallel interface for easy integration
Reliable and robust design
Key Reasons to Choose This Product
Suitable for a variety of applications requiring high-speed, low-power SRAM
Proven reliability and performance
Easy to integrate into your system design
Cost-effective solution for your memory needs
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry safety standards
Compatibility
Suitable for a wide range of electronic systems and applications
Application Areas
Microcontroller and processor systems
Industrial and commercial equipment
Telecommunications and networking devices
Consumer electronics
Product Lifecycle
["This product is now obsolete and nearing the end of its lifecycle.","There are no direct equivalent or alternative models currently available from Renesas.","Customers are advised to contact our website's sales team for information on replacement or alternative options."]
IDT6116LA25L32BIDT (Renesas Electronics Corporation)