Manufacturer Part Number
HVM14STR-E
Manufacturer
Renesas Electronics America
Introduction
The HVM14STR-E is a high-performance RF diode designed for use in a variety of RF and microwave applications. It features a low forward voltage drop, high reverse breakdown voltage, and fast switching speed, making it well-suited for use in RF mixers, detectors, limiters, and other RF circuits.
Product Features and Performance
Low forward voltage drop: 0.55V typical
High reverse breakdown voltage: 70V
Fast switching speed: 3ns typical
Operating frequency range: DC to 4GHz
Operating temperature range: -55°C to +150°C
Small package size: SOD-323
Product Advantages
Excellent RF performance
High reliability and durability
Compact and space-saving design
Suitable for a wide range of RF applications
Key Reasons to Choose This Product
Superior RF performance compared to competing diodes
Proven reliability and long service life
Versatile and can be used in a variety of RF circuits
Cost-effective solution for many RF design needs
Quality and Safety Features
Manufactured to high-quality standards
Robust construction for reliable operation
Complies with relevant safety and environmental regulations
Compatibility
The HVM14STR-E is compatible with a variety of RF and microwave circuits, including mixers, detectors, limiters, and other RF applications.
Application Areas
RF and microwave circuits
Wireless communication systems
Radar and satellite communications
Industrial and medical equipment
Product Lifecycle
The HVM14STR-E is an active product, with no plans for discontinuation. There are several equivalent and alternative models available from our website's sales team, such as the HVM14STR-G and the HVM14STR-M, which offer similar performance and features.