Manufacturer Part Number
HVB187YPTR-E
Manufacturer
renesas-electronics-america
Introduction
The HVB187YPTR-E is a high-performance RF diode from Renesas Electronics America. It is designed for use in a variety of radio frequency applications, offering excellent performance and reliability.
Product Features and Performance
High frequency operation up to 18 GHz
Low forward voltage drop
High reverse breakdown voltage
Robust construction for reliable operation
Small package size for compact design
Optimized for RF switching, mixing, and detection applications
Product Advantages
Exceptional high-frequency performance
Efficient power handling capabilities
Durable and reliable design
Compact and space-saving package
Key Reasons to Choose This Product
Proven reliability and long-lasting performance
Versatile RF applications support
Cost-effective solution for high-frequency systems
Seamless integration into compact designs
Quality and Safety Features
Compliant with RoHS and other environmental standards
Stringent quality control measures during manufacturing
Robust construction for endurance in harsh conditions
Compatibility
This RF diode is compatible with a wide range of RF and microwave circuit designs, making it a suitable choice for various applications.
Application Areas
Wireless communications
Radar systems
Satellite communications
Test and measurement equipment
Industrial and scientific instrumentation
Product Lifecycle
The HVB187YPTR-E is an active and currently available product from Renesas Electronics America. There are no known equivalent or alternative models at this time. If you require further information or assistance, please contact our sales team through our website.