Manufacturer Part Number
HM28100TTI5SE
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a high-performance, low-power 8Mbit SRAM (Static Random Access Memory) integrated circuit from Renesas Electronics Corporation.
Product Features and Performance
8Mbit of memory capacity
55ns access time
55ns write cycle time for word and page
Parallel memory interface
1M x 8 memory organization
SRAM volatile memory technology
Operates at 4.5V to 5.5V supply voltage
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-density and high-speed SRAM for various embedded applications
Low power consumption for energy-efficient operation
Wide temperature range for use in diverse environments
Reliable and durable performance
Key Technical Parameters
Memory Capacity: 8Mbit
Access Time: 55ns
Write Cycle Time: 55ns
Memory Organization: 1M x 8
Memory Interface: Parallel
Supply Voltage: 4.5V to 5.5V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
44-TSOP II package for surface mount compatibility
Compatibility
This SRAM IC is compatible with a wide range of embedded systems and microcontrollers that require high-speed, high-density volatile memory.
Application Areas
Embedded systems
Industrial automation
Networking equipment
Consumer electronics
Automotive electronics
Product Lifecycle
This SRAM product is currently in active production and readily available from Renesas Electronics Corporation. There are no plans for discontinuation, and compatible replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High-performance SRAM with fast access and write speeds
Large 8Mbit memory capacity for demanding applications
Low power consumption for energy-efficient operation
Wide operating temperature range for use in diverse environments
Reliable and durable performance with RoHS3 compliance
Surface mount compatibility for easy integration into embedded systems
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