Manufacturer Part Number
HAT2141H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance, low-resistance N-channel power MOSFET for switching applications
Product Features and Performance
100V drain-to-source voltage
5mΩ maximum on-resistance at 7.5A, 10V
15A continuous drain current at 25°C
3200pF maximum input capacitance at 10V
20W maximum power dissipation at Tc
Suitable for switching applications
Product Advantages
Low on-resistance for high efficiency
High power density
Compact LFPAK surface-mount package
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 27.5mΩ @ 7.5A, 10V
Id (Continuous) @ 25°C: 15A
Ciss (Max) @ Vds: 3200pF @ 10V
Pd (Max): 20W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for use in a wide range of switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently in production, no discontinuation planned. Suitable replacement or upgrade options available.
Key Reasons to Choose This Product
High power density and efficiency due to low on-resistance
Compact LFPAK surface-mount package for space-constrained designs
Reliable MOSFET technology for long-term performance
Suitable for a wide range of switching applications
