Manufacturer Part Number
HAT2099H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-Channel MOSFET transistor suitable for power management and switching applications.
Product Features and Performance
High current capability up to 50A continuous drain current
Low on-resistance of 3.7 milliohms
High voltage rating of 30V drain-to-source
Wide operating temperature range up to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for high-current applications
Compact surface-mount package for space-saving PCB layouts
Reliable performance in high-temperature environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.7 milliohms @ 25A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 4750 pF @ 10V
Power Dissipation (Tc): 30W
Quality and Safety Features
RoHS3 compliant
LFPAK package for high reliability and thermal performance
Compatibility
Surface mount packaging (SC-100, SOT-669)
Compatible with standard SMT assembly processes
Application Areas
Power supplies
Motor drives
Industrial automation
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
High current capability for demanding power applications
Excellent power efficiency and thermal performance
Compact surface-mount package for space-constrained designs
Reliable operation in high-temperature environments
Proven quality and safety with RoHS3 compliance