Manufacturer Part Number
HAT2054M-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Operating temperature up to 150°C
Drain to Source Voltage (Vdss) of 30V
Gate-Source Voltage (Vgs) range of ±20V
Low on-resistance (Rds(on)) of 31mΩ @ 3A, 10V
Continuous Drain Current (Id) of 6.3A at 25°C
Input Capacitance (Ciss) of 620pF at 10V
Maximum Power Dissipation of 1.05W at 25°C
Product Advantages
High temperature operation
Low on-resistance for efficient power switching
Suitable for a variety of power control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) (Max): ±20V
On-resistance (Rds(on)): 31mΩ @ 3A, 10V
Continuous Drain Current (Id): 6.3A at 25°C
Input Capacitance (Ciss): 620pF at 10V
Power Dissipation (Max): 1.05W at 25°C
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 2.5V @ 1mA
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Surface mount package (SOT-23-6 Thin, TSOT-23-6)
RoHS compliance status not applicable
Compatibility
Suitable for a variety of power control and switching applications
Application Areas
Power supplies
Motor controls
Inverters
Appliances
Industrial electronics
Product Lifecycle
Current product, no information on discontinuation
Replacements or upgrades may be available from Renesas
Key Reasons to Choose This Product
High temperature operation up to 150°C
Low on-resistance for efficient power switching
Suitable for a wide range of power control applications
Reliable MOSFET technology from a reputable manufacturer
