Manufacturer Part Number
HAT2038R-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
Dual N-Channel MOSFET Array
Product Features and Performance
Dual N-Channel MOSFET design
60V Drain-Source Voltage
5A Continuous Drain Current
58mΩ Typical On-Resistance
520pF Input Capacitance
Logic Level Gate
2V Typical Gate Threshold Voltage
150°C Maximum Junction Temperature
3W Maximum Power Dissipation
Product Advantages
Compact 8-SOP package
Low on-resistance for efficient power switching
Suitable for various power control applications
Reliable performance and thermal characteristics
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V
Current Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design for industrial applications
Compatibility
Suitable for various power control and switching applications
Application Areas
Motor control
Power supplies
Industrial automation
Electronic appliances
Product Lifecycle
Active product
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Compact and efficient dual N-Channel MOSFET design
Low on-resistance for improved power efficiency
Reliable performance and thermal characteristics
Suitable for a wide range of power control applications
RoHS3 compliance for environmental sustainability