Manufacturer Part Number
HAT1069C-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT1069C-EL-E is a P-channel MOSFET discrete semiconductor product from Renesas Electronics Corporation.
Product Features and Performance
12V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
52mOhm Maximum On-State Resistance (Rds On)
4A Continuous Drain Current (Id) at 25°C
1380pF Maximum Input Capacitance (Ciss)
900mW Maximum Power Dissipation
Product Advantages
Low On-State Resistance for Efficient Power Switching
High Current Handling Capability
Compact 6-CMFPAK Surface Mount Package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
2V Maximum Gate Threshold Voltage (Vgs(th))
8V to 4.5V Drive Voltage Range
16nC Maximum Gate Charge (Qg)
Quality and Safety Features
Rated for 150°C Operating Temperature
RoHS Compliant
Compatibility
Surface Mount 6-CMFPAK Package
Tape & Reel Packaging
Application Areas
Power Management Circuits
Switching Regulators
Motor Drives
General Purpose Power Switching
Product Lifecycle
Current Production
Replacement and Upgrade Options Available
Key Reasons to Choose
Excellent On-State Resistance for Power Efficiency
High Current Capability in Compact Package
Wide Operating Temperature Range
Compatibility with Standard Surface Mount Assembly
