71V65603S100BQG8 - Renesas Electronics America Inc

Manufacturer Part Number

71V65603S100BQG8

Manufacturer

Renesas Electronics America

Introduction

The Renesas Electronics 71V65603S100BQG8 is a high-performance synchronous SRAM (SSRAM) device offering a memory capacity of 9 Mbit organized as 256K x 36. It is designed to provide fast and reliable data storage and retrieval in a wide range of applications, including networking, telecommunications, and industrial control systems.

Product Features and Performance

Synchronous SRAM (SSRAM) technology for high-speed data access

Memory capacity of 9 Mbit organized as 256K x 36

Clock frequency of up to 100 MHz

Ultra-fast access time of 5 ns

Wide supply voltage range of 3.135V to 3.465V

Operating temperature range of 0°C to 70°C

Product Advantages

Offers high-speed data processing and storage capabilities

Reliable and stable performance in a wide range of operating conditions

Compact surface mount package for efficient board layout

Compatible with a variety of system architectures and applications

Key Reasons to Choose This Product

Exceptional performance and reliability for demanding applications

Scalable memory capacity to meet diverse system requirements

Ease of integration into existing designs

Cost-effective solution for high-volume production

Quality and Safety Features

Rigorous quality control and testing procedures

Compliance with industry standards and safety regulations

Compatibility

Suitable for use in a variety of networking, telecommunications, and industrial control systems

Application Areas

Networking equipment

Telecommunications infrastructure

Industrial automation and control systems

Embedded systems and devices

Product Lifecycle

["This product is currently in the Last Time Buy phase, indicating that it is nearing discontinuation.","Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available."]