Manufacturer Part Number
71024S20TYG8
Manufacturer
Renesas Electronics America
Introduction
The 71024S20TYG8 is a high-performance 1Mbit Asynchronous SRAM with a parallel interface. It offers fast access time and write cycle time, making it suitable for a variety of applications that require reliable and efficient data storage.
Product Features and Performance
Memory Type: Volatile SRAM
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Write Cycle Time Word, Page: 20ns
Access Time: 20ns
Voltage Supply: 4.5V to 5.5V
Operating Temperature: 0°C to 70°C (TA)
Product Advantages
High-speed performance with fast access and write cycle times
Reliable and consistent data storage
Parallel interface for easy integration into various systems
Wide operating temperature range for versatile applications
Key Reasons to Choose This Product
Robust and reliable SRAM solution for mission-critical applications
Optimized for high-speed data processing and storage
Seamless integration into a variety of electronic systems
Cost-effective and energy-efficient memory solution
Quality and Safety Features
Rigorously tested for performance and reliability
Compliance with relevant industry standards and regulations
Compatibility
Surface mount package (32-BSOJ) for easy integration
Application Areas
Industrial control systems
Telecommunications equipment
Automotive electronics
Medical devices
Consumer electronics
Product Lifecycle
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