2SK3455B-S17-AY - Renesas

Manufacturer Part Number

2SK3455B-S17-AY

Manufacturer

Renesas Electronics Corporation

Introduction

This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single device.

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss) of 500 V

Maximum Gate-Source Voltage (Vgs) of ±30 V

On-State Resistance (Rds(on)) of 600 mOhm @ 6A, 10 V

Continuous Drain Current (Id) of 12A at 25°C case temperature

Input Capacitance (Ciss) of 1800 pF @ 10 V

Power Dissipation of 2W at 25°C ambient temperature, 50W at 25°C case temperature

Gate Charge (Qg) of 30 nC @ 10 V

Product Advantages

High voltage and current capabilities

Low on-state resistance for efficient power delivery

Compact through-hole package

Key Technical Parameters

MOSFET technology

N-Channel FET type

Threshold Voltage (Vgs(th)) of 3.5V @ 1mA

Drive Voltage range of 10V

Quality and Safety Features

RoHS non-compliant

Compatibility

Through-hole mounting

Application Areas

Power electronics

Motor control

Switching circuits

Product Lifecycle

No information on discontinuation or replacement available

Key Reasons to Choose This Product

Excellent high voltage and current handling capabilities

Low on-state resistance for efficient power conversion

Compact through-hole package for easy integration