2SK2225-E - Renesas Electronics America Inc

Manufacturer Part Number

2SK2225-E

Manufacturer

Renesas Electronics Corporation

Introduction

The 2SK2225-E is a high-voltage N-channel power MOSFET from Renesas Electronics Corporation.

Product Features and Performance

Drain to Source Voltage (Vdss) of 1500 V

Maximum Vgs of ±20 V

Rds(on) of 12 Ω @ 1 A, 15 V

Continuous Drain Current (Id) of 2 A @ 25°C

Input Capacitance (Ciss) of 984.7 pF @ 30 V

Maximum Power Dissipation of 50 W @ Tc

Product Advantages

High voltage handling capability

Low on-resistance for efficient power switching

Suitable for high-power applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Drive Voltage (Max Rds On, Min Rds On): 15 V

Operating Temperature: 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Compatibility

Mounting Type: Through Hole

Application Areas

Power supplies

Motor drives

Inverters

High-voltage switching circuits

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

High voltage handling capability up to 1500 V

Low on-resistance for efficient power switching

Suitable for high-power applications

RoHS3 compliant