2SK1859-E - Renesas Electronics America Inc

Manufacturer Part Number

2SK1859-E

Manufacturer

Renesas Electronics Corporation

Introduction

High-voltage N-Channel MOSFET for power applications

Product Features and Performance

High breakdown voltage of 900V

Low on-resistance of 3Ω at 3A, 10V

Continuous drain current of 6A at 25°C

Wide operating temperature range up to 150°C

High power dissipation of 60W at Tc

Product Advantages

Suitable for high-voltage, high-power applications

Efficient power conversion and control

Excellent thermal management capabilities

Key Technical Parameters

Drain-Source Voltage (Vdss): 900V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 3Ω @ 3A, 10V

Continuous Drain Current (Id): 6A at 25°C

Input Capacitance (Ciss): 980pF @ 10V

Power Dissipation (Tc): 60W

Quality and Safety Features

RoHS3 compliant

TO-3P package for efficient heat dissipation

Compatibility

Suitable for a wide range of power electronic applications

Application Areas

Switching power supplies

Motor drives

Inverters

Welding equipment

Industrial automation and control systems

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available from Renesas Electronics.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Excellent thermal management and reliability

Compatibility with a wide range of power electronics applications

RoHS3 compliance for environmental sustainability