Manufacturer Part Number
2SK1835-E
Manufacturer
Renesas Electronics Corporation
Introduction
The 2SK1835-E is a high-voltage N-channel MOSFET transistor suitable for a variety of power switching applications.
Product Features and Performance
High drain-to-source voltage rating of 1500V
Low on-state resistance of 7 ohms at 2A, 15V
Continuous drain current of 4A at 25°C
High input capacitance of 1700pF at 10V
Maximum power dissipation of 125W at 25°C
Product Advantages
Exceptional high-voltage handling capability
Low on-state resistance for efficient power switching
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1500V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 7 ohms @ 2A, 15V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 1700pF @ 10V
Power Dissipation (Tc): 125W
Quality and Safety Features
ROHS3 compliant
TO-3P package for improved thermal dissipation
Compatibility
Suitable for through-hole mounting
Application Areas
Power switching circuits
Motor drives
Inverters
Converters
Welding equipment
Industrial electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgraded products may be available in the future.
Several Key Reasons to Choose This Product
Exceptional high-voltage handling capability up to 1500V
Low on-state resistance for efficient power switching
Suitable for a wide range of high-power applications
Robust TO-3P package for improved thermal performance
ROHS3 compliance for environmental safety
2SK1835