Manufacturer Part Number
2SK1317-E
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete semiconductor product
N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 12 Ohm @ 2A, 15 V
Current Continuous Drain (Id) @ 25°C: 2.5 A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
Power Dissipation (Max): 100 W (Tc)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 15 V
Product Advantages
High voltage and power handling capability
Low on-resistance
Compact TO-3P package
Key Technical Parameters
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 12 Ohm @ 2A, 15 V
Current Continuous Drain (Id) @ 25°C: 2.5 A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
Power Dissipation (Max): 100 W (Tc)
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
TO-3P package for improved thermal performance
Compatibility
TO-220-3 package compatible
Application Areas
High power switching applications
Industrial power electronics
Motor control
Power supplies
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
High voltage and power handling capability
Low on-resistance for efficient operation
Compact TO-3P package for space-constrained designs
RoHS3 compliance for environmental sustainability
Proven reliability and performance in industrial applications
2SK1311AMI Semiconductor/onsemi