2SK1070PIDTL-E - Renesas Electronics America Inc

Manufacturer Part Number

2SK1070PIDTL-E

Manufacturer

renesas-electronics-america

Introduction

The 2SK1070PIDTL-E is a N-Channel JFET transistor designed for signal switching applications, produced by Renesas Electronics America. This transistor is classified as obsolete.

Product Features and Performance

N-Channel JFET transistor

Breakdown Voltage (V(BR)GSS): 22 V

Drain-Source On-State Resistance: Very low for efficient conductivity

High-speed switching capability

Product Advantages

High thermal stability up to 150°C operating temperature

Low Input Capacitance (Ciss): 9pF @ 5V, enabling faster signal processing

Efficient power consumption with Power Max of 150 mW

Key Technical Parameters

Voltage Breakdown (V(BR)GSS): 22 V

Current Drain (Idss) @ Vds (Vgs=0): 12 mA @ 5 V

Current Drain (Id) Max: 50 mA

Voltage Cutoff (VGS off) @ Id: 0 V @ 10 µA

Power Max: 150 mW

Operating Temperature: 150°C

Quality and Safety Features

Robust thermal performance for reliability in high-temperature environments

Compliant with industry standard safety and quality norms

Compatibility

Surface Mount mounting type provides compatibility with modern PCB layouts

Package / Case: TO-236-3, SC-59, SOT-23-3 facilitates easy integration into various circuit designs

Application Areas

Ideally suited for signal switching applications

Product Lifecycle

Obsolete; customers should look for replacements or upgrades for new designs

Availability of upgrades or replacements may be limited due to obsolescence

Several Key Reasons to Choose This Product

High thermal stability makes it suitable for applications with elevated temperatures

Low input capacitance enables efficient signal processing

The device supports high-speed switching applications

Despite being obsolete, it offers reliable performance for legacy systems