Manufacturer Part Number
2SK1070PIDTL-E
Manufacturer
renesas-electronics-america
Introduction
The 2SK1070PIDTL-E is a N-Channel JFET transistor designed for signal switching applications, produced by Renesas Electronics America. This transistor is classified as obsolete.
Product Features and Performance
N-Channel JFET transistor
Breakdown Voltage (V(BR)GSS): 22 V
Drain-Source On-State Resistance: Very low for efficient conductivity
High-speed switching capability
Product Advantages
High thermal stability up to 150°C operating temperature
Low Input Capacitance (Ciss): 9pF @ 5V, enabling faster signal processing
Efficient power consumption with Power Max of 150 mW
Key Technical Parameters
Voltage Breakdown (V(BR)GSS): 22 V
Current Drain (Idss) @ Vds (Vgs=0): 12 mA @ 5 V
Current Drain (Id) Max: 50 mA
Voltage Cutoff (VGS off) @ Id: 0 V @ 10 µA
Power Max: 150 mW
Operating Temperature: 150°C
Quality and Safety Features
Robust thermal performance for reliability in high-temperature environments
Compliant with industry standard safety and quality norms
Compatibility
Surface Mount mounting type provides compatibility with modern PCB layouts
Package / Case: TO-236-3, SC-59, SOT-23-3 facilitates easy integration into various circuit designs
Application Areas
Ideally suited for signal switching applications
Product Lifecycle
Obsolete; customers should look for replacements or upgrades for new designs
Availability of upgrades or replacements may be limited due to obsolescence
Several Key Reasons to Choose This Product
High thermal stability makes it suitable for applications with elevated temperatures
Low input capacitance enables efficient signal processing
The device supports high-speed switching applications
Despite being obsolete, it offers reliable performance for legacy systems