Manufacturer Part Number
2SJ601-ZK-E1-AZ
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel MOSFET transistor suitable for various power electronics applications.
Product Features and Performance
Drain-to-source voltage up to 60V
Low on-resistance (RDS(on)) of 31mΩ
Continuous drain current up to 36A at 25°C
Power dissipation up to 65W
Fast switching speed
Surface mount TO-252 (DPAK) package
Product Advantages
Excellent power efficiency due to low on-resistance
Compact and space-saving package
Suitable for high-current and high-power applications
Reliable performance over wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 31mΩ
Continuous Drain Current (ID): 36A
Input Capacitance (Ciss): 3300pF
Power Dissipation (Ptot): 65W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Suitable for high-temperature operation up to 150°C
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters.
Application Areas
Industrial equipment
Power tools
Household appliances
Automotive electronics
Product Lifecycle
This product is an active part and not nearing discontinuation.
Replacements and upgrades may be available from Renesas or other manufacturers.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Compact and space-saving surface mount package
Reliable performance over a wide temperature range
Suitable for a variety of high-power and high-current applications
RoHS3 compliance for environmental responsibility
