Manufacturer Part Number
2SJ598-ZK-E1-AZ
Manufacturer
Renesas Electronics Corporation
Introduction
This is a discrete semiconductor product, specifically a P-channel MOSFET transistor.
Product Features and Performance
Operating temperature up to 150°C
Drain-to-source voltage (Vdss) of 60V
Gate-to-source voltage (Vgs) range of ±20V
On-resistance (Rds(on)) of 130mΩ at 6A, 10V
Continuous drain current (Id) of 12A at 25°C
Input capacitance (Ciss) of 720pF at 10V
Power dissipation of 1W at Ta, 23W at Tc
Gate charge (Qg) of 15nC at 10V
Product Advantages
High-performance MOSFET for power management applications
Low on-resistance for efficient power conversion
Robust design for high-temperature operation
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold voltage (Vgs(th)) of 2.5V at 1mA
Drive voltage range of 4V to 10V
Quality and Safety Features
RoHS3 compliant
TO-252 (DPak) package for surface mount
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Tape and reel packaging
Application Areas
Power management circuits
Motor control
Switching regulators
Audio amplifiers
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements and upgrades may be available from Renesas
Key Reasons to Choose This Product
Excellent performance characteristics for power management applications
Robust design with high-temperature capability
Efficient power conversion with low on-resistance
Compatibility with common surface mount packaging
Proven reliability and quality from Renesas Electronics
