Manufacturer Part Number
2SJ494-AZ
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS non-compliant
Through Hole mounting
TO-220-3 Isolated Tab package
Operating Temperature: 150°C
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
MOSFET (Metal Oxide) technology
Current Continuous Drain (Id) @ 25°C: 20A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Product Advantages
High current handling capability
Low on-resistance
Suitable for high power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 20A (Ta)
Quality and Safety Features
RoHS non-compliant
Compatibility
Through Hole mounting
TO-220-3 Isolated Tab package
Application Areas
High power applications
Product Lifecycle
No information on discontinuation or replacements/upgrades
Key Reasons to Choose This Product
High current handling capability
Low on-resistance
Suitable for high power applications
2SJ499-EAMI Semiconductor/onsemi