2SJ162-E - Renesas

Manufacturer Part Number

2SJ162-E

Manufacturer

Renesas Electronics Corporation

Introduction

This is a P-channel MOSFET transistor from Renesas Electronics Corporation. It is designed for use in various power electronics and switching applications.

Product Features and Performance

High voltage rating of 160V drain-to-source voltage

Continuous drain current of 7A at 25°C

Low on-resistance for efficient power conversion

Input capacitance of 900pF at 10V drain-source voltage

Maximum power dissipation of 100W at case temperature

Product Advantages

Suitable for high voltage and high current applications

Efficient power switching performance

Compact TO-3P package for easy mounting

Key Technical Parameters

MOSFET technology

P-channel FET type

Vgs(th) of 1.45V at 100mA drain current

Operating temperature range up to 150°C

Quality and Safety Features

Robust TO-3P metal package for reliable operation

Designed and manufactured to high quality standards

Compatibility

Compatible with standard TO-3P mounting and footprint

Application Areas

Suitable for use in power supplies, motor drives, and other power electronics circuits

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgraded models may become available in the future as technology advances

Key Reasons to Choose This Product

High voltage and current handling capability

Efficient power switching performance

Compact and robust package design

Reliable operation across wide temperature range

Suitable for a variety of power electronics applications