2SC5508-T2-A - Renesas Electronics America Inc

Manufacturer Part Number

2SC5508-T2-A

Manufacturer

Renesas Electronics Corporation

Introduction

This product is a discrete semiconductor transistor from Renesas Electronics Corporation, specifically a bipolar junction transistor (BJT) designed for RF (radio frequency) applications.

Product Features and Performance

NPN transistor type

Operates at a maximum collector-emitter voltage of 3.3V

Supports a maximum collector current of 35mA

Provides a minimum DC current gain (hFE) of 50 at 5mA, 2V

Achieves a transition frequency of 25GHz

Offers a gain of 17dB

Delivers a low noise figure of 1.1dB at 2GHz

Product Advantages

Suitable for high-frequency RF applications

Provides good current gain and low noise performance

Surface mount package for efficient board-level integration

Key Technical Parameters

Maximum power dissipation: 115mW

Operating temperature range: -55°C to 150°C

Quality and Safety Features

Manufactured using Renesas' reliable semiconductor processes

Complies with relevant industry standards and regulations

Compatibility

Surface mount (SMT) package: SOT-343F

Application Areas

Suitable for use in RF circuits, amplifiers, and other high-frequency applications

Product Lifecycle

No information on product discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Proven reliability and performance from Renesas Electronics

Optimized for high-frequency RF applications

Compact surface mount package for easy integration

Competitive technical specifications and features