Manufacturer Part Number
2SC4783-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
Maximum Collector-Emitter Voltage: 150°C (TJ)
Maximum Collector Cutoff Current: 10A (ICBO)
Collector-Emitter Saturation Voltage: 300mV @ 10mA, 100mA
NPN Transistor Type
Minimum DC Current Gain (hFE): 90 @ 1mA, 6V
Transition Frequency: 250MHz
Product Advantages
High-performance transistor
Suitable for a wide range of applications
Reliable and durable
Key Technical Parameters
Package: SC-75, SOT-416
Mounting Type: Surface Mount
Quality and Safety Features
Meets industrial standards for quality and safety
Compatibility
Suitable for use in a variety of electronic circuits and devices
Application Areas
Amplifiers
Switches
Power supplies
Industrial electronics
Product Lifecycle
Currently available
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High performance and reliability
Suitable for a wide range of applications
Compact and surface-mountable package
Meets industrial quality and safety standards