Manufacturer Part Number
2SC3624-T1B-A
Manufacturer
Renesas Electronics Corporation
Introduction
High-frequency, high-gain NPN bipolar junction transistor for general-purpose amplifier and switching applications.
Product Features and Performance
High frequency transition up to 250 MHz
High DC current gain (hFE) of 1000 or more
Low collector-emitter saturation voltage (VCE(sat)) of 300 mV or less
Low collector cutoff current (ICBO) of 100 nA or less
Power dissipation of 200 mW
Collector-emitter breakdown voltage of 50 V
Collector current of 150 mA
Product Advantages
Suitable for high-frequency, high-gain amplifier and switching applications
Excellent electrical characteristics for reliable performance
Compact TO-236-3 (SC-59) surface mount package
Key Technical Parameters
Frequency Transition: 250 MHz
DC Current Gain (hFE): 1000 or more
Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV or less
Collector Cutoff Current (ICBO): 100 nA or less
Power Dissipation: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (IC): 150 mA
Quality and Safety Features
RoHS3 compliant
Reliable performance in a compact surface mount package
Compatibility
Suitable for surface mount assembly
Compatible with standard TO-236-3 (SC-59) footprint
Application Areas
General-purpose amplifier and switching applications
Consumer electronics, industrial equipment, and telecommunications
Product Lifecycle
Mature product with ongoing availability
Replacements and upgrades may be available from Renesas or alternative suppliers
Several Key Reasons to Choose This Product
High-frequency, high-gain performance for reliable amplifier and switching functions
Excellent electrical characteristics for efficient and reliable operation
Compact and compatible surface mount package for space-constrained designs
Proven reliability and long-term availability from a trusted semiconductor manufacturer
2SC3624A-T1B-A/L15Renesas Electronics Corporation