Manufacturer Part Number
RFP50N06
Manufacturer
Harris Corporation
Introduction
High power N-channel MOSFET transistor
Product Features and Performance
High current handling capability up to 50A continuous drain current
Low on-resistance of 22mOhm max at 50A, 10V
Wide operating temperature range of -55°C to 175°C
High voltage rating of 60V drain-source voltage
Fast switching speed and low gate charge
Product Advantages
Excellent thermal performance and power handling
Reliable operation in high power applications
Suitable for use in switching power supplies, motor drives, and other high-current circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 22mOhm max at 50A, 10V
Continuous Drain Current (Id): 50A at 25°C
Input Capacitance (Ciss): 2020pF max at 25V
Power Dissipation (Pd): 131W at 25°C
Quality and Safety Features
RoHS non-compliant
TO-220-3 package for through-hole mounting
Compatibility
Compatible with standard TO-220-3 footprint and socket
Application Areas
Switching power supplies
Motor drives
Industrial and automotive high-current electronics
Product Lifecycle
Mature product, not nearing discontinuation
Replacement parts and upgrades available
Key Reasons to Choose
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for use in harsh environments
Reliable and rugged design for demanding applications
Proven performance and availability of replacement parts
RFP47N10Intersil (Renesas Electronics Corporation)