Manufacturer Part Number
RFD14N05L
Manufacturer
Harris Corporation
Introduction
A high-performance N-channel power MOSFET transistor
Product Features and Performance
Operates at high voltage (up to 50V) and high current (up to 14A)
Low on-resistance (100mOhm) for efficient power switching
Fast switching speed with low gate charge (40nC)
Wide operating temperature range (-55°C to 175°C)
Designed for use in power conversion, motor control, and other high-power applications
Product Advantages
Excellent power handling capabilities
Efficient power conversion with low conduction losses
Robust design for reliable operation in harsh environments
Flexible mounting with through-hole package
Key Technical Parameters
Drain-Source Voltage (Vdss): 50V
Gate-Source Voltage (Vgs): ±10V
On-Resistance (Rds(on)): 100mOhm
Continuous Drain Current (Id): 14A
Input Capacitance (Ciss): 670pF
Power Dissipation (Tc): 48W
Quality and Safety Features
RoHS non-compliant
I-PAK package for enhanced thermal performance and reliability
Compatibility
Suitable for use in a wide range of power electronics and motor control applications
Application Areas
Power conversion
Motor control
High-power switching
Industrial electronics
Product Lifecycle
This product is an active and widely used component in the market
Replacement or upgrade options may be available from the manufacturer or other suppliers
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-power applications
Reliable operation in challenging environmental conditions
Flexible mounting options with through-hole package
Proven performance and availability from a reputable manufacturer
RFD14N05LSM MOSFairchild (onsemi)