Manufacturer Part Number
MG400J2YS61A
Manufacturer
Powerex, Inc.
Introduction
High-power insulated gate bipolar transistor (IGBT) module designed for industrial applications
Product Features and Performance
Rated power up to 2160 W
Operating temperature range of -20°C to 150°C
Half-bridge configuration
Input capacitance (Cies) of 85 nF at 10 V
Collector-emitter breakdown voltage (VCES) up to 600 V
Maximum collector current (IC) of 400 A
On-state voltage (VCE(on)) of 2.2 V at 15 V gate voltage and 400 A collector current
Product Advantages
Robust and reliable performance for industrial applications
Efficient power handling capabilities
Wide operating temperature range
Compact and integrated half-bridge design
Key Technical Parameters
Manufacturer Part Number: MG400J2YS61A
Package: Module
Series: IGBTMOD
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 85 nF @ 10 V
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 400 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 400A
Quality and Safety Features
No NTC thermistor included
Compatibility
Chassis mount configuration
Application Areas
Industrial applications requiring high-power IGBT modules, such as motor drives, power inverters, and power supplies
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Key Reasons to Choose This Product
Robust and reliable performance for industrial applications
Efficient power handling capabilities up to 2160 W
Wide operating temperature range of -20°C to 150°C
Integrated half-bridge design for compact and efficient system integration
