Manufacturer Part Number
CM600DU-24NFH
Manufacturer
Powerex, Inc.
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT) module
Designed for high-power industrial applications
Product Features and Performance
Capable of handling up to 1550 W of power
Wide operating temperature range of -40°C to 150°C
Low input capacitance of 95 nF at 10 V
Maximum collector-emitter breakdown voltage of 1200 V
Maximum collector current of 600 A
Low collector-emitter saturation voltage of 6.5 V at 15 V gate-emitter voltage and 600 A collector current
Maximum collector cutoff current of 1 mA
Product Advantages
Robust and reliable performance for high-power applications
Efficient power handling capabilities
Wide temperature operating range
Low input capacitance for improved switching performance
Key Technical Parameters
Manufacturer Part Number: CM600DU-24NFH
Transistor Type: IGBT
Configuration: Half Bridge
Input Capacitance (Cies): 95 nF @ 10 V
Collector-Emitter Breakdown Voltage (Max): 1200 V
Collector Current (Max): 600 A
Collector-Emitter Saturation Voltage (Max): 6.5 V @ 15 V, 600 A
Collector Cutoff Current (Max): 1 mA
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
RoHS compliant
Chassis mount design for secure installation
Compatibility
Suitable for a wide range of high-power industrial applications
Application Areas
Industrial motor drives
Power inverters
Uninterruptible power supplies (UPS)
Renewable energy systems
Other high-power industrial equipment
Product Lifecycle
This product is currently in production and widely available
Replacements and upgrades may be available in the future, depending on market demand and technology advancements
Several Key Reasons to Choose This Product
Exceptional power handling capacity up to 1550 W
Wide operating temperature range for reliable performance in diverse environments
Low input capacitance for improved switching efficiency
Robust and reliable design for industrial applications
RoHS compliance for environmental responsibility
