Manufacturer Part Number
CM400HA-24H
Manufacturer
Powerex, Inc.
Introduction
High-power insulated gate bipolar transistor (IGBT) module
Product Features and Performance
Designed for high-power industrial applications
Capable of handling up to 2800 W of power
Operates in a wide temperature range of -40°C to 150°C
Offers a high collector-emitter breakdown voltage of 1200 V
Provides a maximum collector current of 400 A
Features a low collector-emitter saturation voltage of 3.4 V at 15 V gate voltage and 400 A collector current
Product Advantages
Robust and reliable design for demanding industrial environments
High power handling capability
Wide operating temperature range
Excellent electrical performance characteristics
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 1200 V
Collector Current (max): 400 A
Collector-Emitter Saturation Voltage (max): 3.4 V
Input Capacitance: 80 nF
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS non-compliant
No NTC thermistor included
Compatibility
Suitable for a variety of high-power industrial applications
Application Areas
Suitable for use in industrial equipment, power electronics, and other high-power applications
Product Lifecycle
The product is currently available, with no information about discontinuation or replacement models.
Key Reasons to Choose This Product
High-power handling capability up to 2800 W
Wide operating temperature range of -40°C to 150°C
Robust and reliable design for demanding industrial environments
Excellent electrical performance characteristics, including high breakdown voltage and low saturation voltage
Compatibility with a variety of high-power industrial applications