Manufacturer Part Number
CM300HA-12H
Manufacturer
Powerex, Inc.
Introduction
High-power discrete semiconductor product
Transistor Insulated-Gate Bipolar Transistor (IGBT) Module
Product Features and Performance
Designed for high-power applications
Capable of handling up to 1100 W of power
Wide operating temperature range of -40°C to 150°C
Low input capacitance of 30 nF @ 10 V
High collector-emitter breakdown voltage of 600 V
Maximum collector current of 300 A
Low collector-emitter saturation voltage of 2.8 V @ 15 V, 300 A
Product Advantages
Efficient and reliable power handling
Wide temperature tolerance
Low input capacitance for improved switching performance
High breakdown voltage for use in high-voltage applications
Key Technical Parameters
Power Rating: 1100 W
Operating Temperature Range: -40°C to 150°C
Input Capacitance (Cies): 30 nF @ 10 V
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 300 A
Collector-Emitter Saturation Voltage: 2.8 V @ 15 V, 300 A
Quality and Safety Features
RoHS non-compliant
Compatibility
Single configuration
Chassis mount
Application Areas
High-power industrial and commercial applications
Suitable for use in motor drives, power converters, and other high-power electronic systems
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Efficient and reliable high-power performance
Wide operating temperature range
Low input capacitance for improved switching
High breakdown voltage for use in high-voltage applications
Chassis mount configuration for secure installation