Manufacturer Part Number
CM200DY-28H
Manufacturer
Powerex, Inc.
Introduction
High-power discrete semiconductor product, part of the IGBTMOD series.
Product Features and Performance
IGBT (Insulated Gate Bipolar Transistor) module design
1500 W maximum power rating
-40°C to 150°C operating temperature range
40 nF input capacitance at 10 V
1400 V maximum collector-emitter breakdown voltage
200 A maximum collector current
2 V maximum collector-emitter saturation voltage at 15 V gate-emitter voltage and 200 A collector current
1 mA maximum collector cutoff current
Product Advantages
Robust and reliable performance
Efficient power handling capability
Wide operating temperature range
Key Technical Parameters
IGBT module configuration: Half bridge
Packaging: Chassis mount module
No NTC thermistor included
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for a variety of high-power applications.
Application Areas
Industrial motor drives
Power inverters
Welding equipment
Induction heating systems
Product Lifecycle
Active product, no information on discontinuation or availability of replacements/upgrades.
Several Key Reasons to Choose This Product
High-performance IGBT module with robust design and wide operating temperature range.
Efficient power handling capabilities for demanding applications.
Reliable and durable construction for long-term use.
