Manufacturer Part Number
CM150DY-12NF
Manufacturer
Powerex, Inc.
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) module
Designed for use in a wide range of power conversion applications
Product Features and Performance
Rated for up to 590 W of power
Operating temperature range of -40°C to 150°C
Half-bridge configuration
Input capacitance (Cies) of 23 nF at 10 V
Collector-emitter breakdown voltage (Vceo) of 600 V
Collector current (Ic) of up to 150 A
Typical collector-emitter saturation voltage (Vce(on)) of 2.2 V at 15 V, 150 A
Product Advantages
High power density
Excellent thermal performance
Reliable and robust design
Suitable for a variety of power conversion applications
Key Technical Parameters
Collector-emitter breakdown voltage (Vceo): 600 V
Collector current (Ic): 150 A
Collector-emitter saturation voltage (Vce(on)): 2.2 V @ 15 V, 150 A
Input capacitance (Cies): 23 nF @ 10 V
Quality and Safety Features
RoHS compliant
Chassis mount package for improved heat dissipation
No built-in NTC thermistor
Compatibility
Suitable for a wide range of power conversion applications, such as industrial drives, renewable energy systems, and power supplies
Application Areas
Industrial drives
Renewable energy systems
Power supplies
Other power conversion applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Powerex or other IGBT module manufacturers
Key Reasons to Choose This Product
High power density and excellent thermal performance
Reliable and robust design for long-term operation
Suitable for a variety of power conversion applications
Competitive pricing and availability from a reputable manufacturer