Manufacturer Part Number
CM150DU-34KA
Manufacturer
Powerex, Inc.
Introduction
Discrete semiconductor product
Transistor IGBT Module
Product Features and Performance
Half-bridge configuration
Input capacitance: 21 nF @ 10 V
Collector-emitter breakdown voltage (max): 1700 V
Collector current (max): 150 A
Collector-emitter saturation voltage (max): 4 V @ 15 V, 150 A
Collector cutoff current (max): 1 mA
Power rating: 1100 W
Operating temperature: -40°C to 150°C (TJ)
Product Advantages
Efficient power conversion
High voltage and current handling capability
Suitable for harsh environments
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1700 V
Current Collector (Ic) (Max): 150 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 150A
Current Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 10 V
Quality and Safety Features
Chassis mount design for secure installation
Suitable for operation in -40°C to 150°C temperature range
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power inverters
Motor drives
Welding equipment
Industrial automation
Product Lifecycle
Currently available
No information on discontinuation or upgrades
Several Key Reasons to Choose This Product
High power handling capability
Efficient power conversion
Suitable for harsh environments
Secure chassis mount design
Wide operating temperature range
