Manufacturer Part Number
CM100DY-12H
Manufacturer
Powerex, Inc.
Introduction
This is a high-power discrete semiconductor product, specifically an Insulated-Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
400W maximum power handling
Half-bridge configuration
10nF input capacitance at 10V Vce
600V maximum collector-emitter breakdown voltage
100A maximum collector current
8V maximum collector-emitter saturation voltage at 15V gate voltage and 100A collector current
1mA maximum collector cutoff current
-40°C to 150°C operating temperature range
Product Advantages
High power density
Robust performance under extreme temperatures
Efficient power conversion
Key Technical Parameters
Manufacturer Part Number: CM100DY-12H
Package: Module
Series: IGBTMOD
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 10 nF @ 10 V
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 100 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Current Collector Cutoff (Max): 1 mA
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS non-compliant
Compatibility
This IGBT module is designed for use in a variety of power conversion and control applications.
Application Areas
Industrial motor drives
Power inverters
Switching power supplies
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is an active, in-production part. No information on discontinuation or replacement availability is provided.
Key Reasons to Choose This Product
High power density for compact designs
Robust performance across a wide temperature range
Efficient power conversion for improved energy efficiency
Reliable and durable construction for long-term use
