Manufacturer Part Number
MTM861270LBF
Manufacturer
Panasonic
Introduction
Panasonic's MTM861270LBF is a discrete semiconductor product, specifically a p-channel MOSFET transistor.
Product Features and Performance
20V drain-source voltage (Vdss)
±10V gate-source voltage (Vgs)
120mΩ maximum on-resistance (Rds(on)) at 1A, 4V
2A continuous drain current (Id) at 25°C
300pF maximum input capacitance (Ciss) at 10V
540mW maximum power dissipation at 25°C
Product Advantages
Low on-resistance for efficient power switching
High drain current capability
Compact surface mount package
RoHS compliant
Key Technical Parameters
MOSFET technology
P-channel FET type
1V maximum gate-source threshold voltage (Vgs(th)) at 1mA
8V to 4V drive voltage range
Quality and Safety Features
RoHS compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
Power management circuits
Switching applications
General-purpose electronic devices
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Panasonic or other manufacturers
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
High temperature operation capability
Compact surface mount package for space-constrained designs
RoHS compliance for environmentally friendly applications
Availability and compatibility with standard assembly processes
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