Manufacturer Part Number
PUMH11,115
Manufacturer
Nexperia
Introduction
The PUMH11,115 is a discrete semiconductor product from Nexperia, specifically a bipolar junction transistor (BJT) array with pre-biasing.
Product Features and Performance
2 NPN pre-biased transistors in a single package
Power rating of 300mW
Collector-emitter breakdown voltage up to 50V
Collector current up to 100mA
Collector cutoff current up to 1A
Low saturation voltage of 150mV @ 10mA collector current
Guaranteed minimum DC current gain of 30 @ 5mA, 5V
Product Advantages
Compact size in a 6-TSSOP package
Pre-biased for easy implementation in circuits
Suitable for various applications requiring matched transistor pairs
Key Technical Parameters
Collector-emitter breakdown voltage: 50V (max)
Collector current: 100mA (max)
Collector cutoff current: 1A (max)
Saturation voltage: 150mV @ 10mA collector current
DC current gain: 30 (min) @ 5mA, 5V
Base resistors: 10kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Packaged in 6-TSSOP, SC-88, SOT-363 format
Tape and reel (TR) packaging available
Application Areas
Suitable for various electronic circuits requiring matched transistor pairs, such as:
- Amplifiers
- Switches
- Logic gates
- Biasing networks
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
Compact and efficient design with pre-biased transistors
Excellent electrical characteristics, including high breakdown voltage, high current capability, and low saturation voltage
Suitable for a wide range of electronic circuit applications
RoHS3 compliance and surface mount compatibility for versatile usage
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