PSMN7R6-100BSEJ - Nexperia USA Inc.

Manufacturer Part Number

PSMN7R6-100BSEJ

Manufacturer

Nexperia

Introduction

High-performance N-channel MOSFET transistor optimized for high-frequency and high-power density applications.

Product Features and Performance

100V drain-to-source voltage

6mΩ maximum on-resistance at 25A, 10V

75A continuous drain current at 25°C

296W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 7110pF at 50V

Fast switching speed and low gate charge of 128nC at 10V

Product Advantages

Optimized for high-frequency and high-power density applications

Excellent thermal performance and power handling capability

Robust design and reliable operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 7.6mΩ at 25A, 10V

Continuous Drain Current (Id): 75A at 25°C

Power Dissipation (Pd): 296W at Tc

Input Capacitance (Ciss): 7110pF at 50V

Gate Charge (Qg): 128nC at 10V

Quality and Safety Features

RoHS3 compliant

D2PAK package for improved thermal performance and reliability

Compatibility

Suitable for a wide range of high-frequency and high-power density applications

Application Areas

Switching power supplies

Class-D audio amplifiers

Motor drives

Industrial and telecom power electronics

Product Lifecycle

This product is currently in production and available for purchase.

Replacement or upgraded products may be available in the future as technology advances.

Key Reasons to Choose This Product

High power density and efficiency for high-frequency applications

Excellent thermal management and reliability

Robust design and wide operating temperature range

Optimized performance-to-cost ratio for industrial and telecom applications