Manufacturer Part Number
PSMN7R6-100BSEJ
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET transistor optimized for high-frequency and high-power density applications.
Product Features and Performance
100V drain-to-source voltage
6mΩ maximum on-resistance at 25A, 10V
75A continuous drain current at 25°C
296W maximum power dissipation at Tc
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 7110pF at 50V
Fast switching speed and low gate charge of 128nC at 10V
Product Advantages
Optimized for high-frequency and high-power density applications
Excellent thermal performance and power handling capability
Robust design and reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.6mΩ at 25A, 10V
Continuous Drain Current (Id): 75A at 25°C
Power Dissipation (Pd): 296W at Tc
Input Capacitance (Ciss): 7110pF at 50V
Gate Charge (Qg): 128nC at 10V
Quality and Safety Features
RoHS3 compliant
D2PAK package for improved thermal performance and reliability
Compatibility
Suitable for a wide range of high-frequency and high-power density applications
Application Areas
Switching power supplies
Class-D audio amplifiers
Motor drives
Industrial and telecom power electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
High power density and efficiency for high-frequency applications
Excellent thermal management and reliability
Robust design and wide operating temperature range
Optimized performance-to-cost ratio for industrial and telecom applications
PSMN7RO-100ES+127LUMILEDS