Manufacturer Part Number
PSMN6R9-100YSFX
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching characteristics.
Product Features and Performance
100V drain-source voltage
100A continuous drain current
238W power dissipation
Fast switching with low gate charge
Low on-resistance for efficient power conversion
Product Advantages
Optimized for high-frequency, high-power switching applications
Excellent thermal performance for reliable operation
Compact LFPAK56 and Power-SO8 surface-mount packages
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 100A @ 25°C
On-Resistance (Rds(on)): Low, optimized for high efficiency
Gate Charge (Qg): 50.3nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction for long-term use
Compatibility
Compatible with a wide range of high-power, high-frequency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial, medical, and consumer electronics
Product Lifecycle
Currently in production with no plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact, surface-mount packaging
Reliable performance in high-temperature environments
Optimized for high-frequency, high-power switching applications
Supports a wide range of industrial, medical, and consumer electronics applications
