Manufacturer Part Number
PSMN3R5-80YSFX
Manufacturer
Nexperia
Introduction
High-performance, low on-resistance N-channel MOSFET transistor suitable for high-power switch-mode applications.
Product Features and Performance
Extremely low on-resistance (RDSon) of 3.5 mΩ
Continuous drain current (ID) of 150A at 25°C
Designed for high-frequency, high-efficiency switching applications
Robust and reliable design with excellent thermal performance
Product Advantages
Enables high-efficiency and high-power density power conversion designs
Excellent thermal handling capability for demanding applications
Low switching and conduction losses for improved overall system efficiency
Key Technical Parameters
Drain-Source Voltage (VDS): 80V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDSon): 3.5mΩ @ 25A, 10V
Continuous Drain Current (ID): 150A at 25°C
Input Capacitance (Ciss): 7227pF @ 40V
Power Dissipation (PD): 294W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured in accordance with industry quality standards
Compatibility
Compatible with a wide range of high-power, high-efficiency power conversion applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Battery management systems
Inverters and converters
Product Lifecycle
This product is an actively supported and maintained component in Nexperia's portfolio.
Replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Exceptional low on-resistance performance for high-efficiency power conversion
Robust and reliable design suitable for demanding applications
Excellent thermal handling capability for high-power operation
Optimized for high-frequency, high-efficiency switching applications
RoHS3 compliance and quality-assured manufacturing
PSMN3R9-100YSFXNexperia