Manufacturer Part Number
PSMN3R0-30YLDX
Manufacturer
Nexperia
Introduction
N-Channel MOSFET transistor
Part of the Nexperia MOSFET portfolio
Product Features and Performance
Drain-Source Voltage (Vdss) of 30V
Max Gate-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds(on)) of 3.1mΩ @ 25A, 10V
Continuous Drain Current (Id) of 100A @ 25°C (Tc)
Input Capacitance (Ciss) of 2939pF @ 15V
Power Dissipation (Ptot) of 91W @ 25°C (Tc)
Operating Temperature Range of -55°C to 175°C (Tj)
Product Advantages
Low on-state resistance for efficient power conversion
High current handling capability
Compact LFPAK56 and Power-SO8 package options
RoHS3 compliant
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 2.2V @ 1mA
Gate Charge (Qg) of 46.4nC @ 10V
Drive Voltage Range of 4.5V to 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Product Lifecycle
This product is not nearing discontinuation
Replacement or upgrade options are available
Key Reasons to Choose This Product
Excellent performance in high-current, high-efficiency power conversion applications
Compact, surface-mount package options
Reliable operation over a wide temperature range
RoHS3 compliance for use in environmentally-conscious designs
PSMN3R0-60PS,127NXP USA Inc.MOSFET N-CH 60V 100A TO220