Manufacturer Part Number
PSMN059-150Y,115
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET in LFPAK56 and Power-SO8 packages for high-power, high-frequency and high-efficiency applications.
Product Features and Performance
Optimized for high-power, high-frequency and high-efficiency applications
Low on-resistance for low conduction losses
Fast switching for high-frequency applications
Rugged design and high avalanche capability
Product Advantages
Excellent thermal performance and power dissipation
Compact and space-efficient LFPAK56 and Power-SO8 packages
High blocking voltage capability up to 150V
Low gate charge for high-frequency switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 59mΩ @ 12A, 10V
Continuous Drain Current (Id): 43A @ 25°C (Tc)
Input Capacitance (Ciss): 1529pF @ 30V
Power Dissipation (Ptot): 113W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Rugged design with high avalanche capability
Compatibility
Suitable for high-power, high-frequency and high-efficiency applications
Application Areas
Switch-mode power supplies
Amplifiers
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent thermal performance and power dissipation for high-efficiency applications
Compact and space-efficient LFPAK56 and Power-SO8 packages
High blocking voltage capability up to 150V for versatile applications
Low gate charge for high-frequency switching
Rugged design with high avalanche capability for reliable operation
PSMN063-150DFreescale / NXP Semiconductors
PSMN063-150D MOSLUMILEDS