Manufacturer Part Number
PSMN013-100YSEX
Manufacturer
Nexperia
Introduction
High-performance N-channel enhancement-mode power MOSFET in LFPAK56 and Power-SO8 packages for high-frequency switching applications
Product Features and Performance
Extremely low on-resistance for low conduction losses
Optimized for high-frequency, high-current and high-voltage switching
Suitable for high-efficiency DC-DC converters, motor drives, and other power management applications
Product Advantages
Excellent thermal and electrical performance
High power density
Compact and space-saving design
Extremely low on-resistance for high efficiency
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 13 mΩ @ 20 A, 10 V
Continuous Drain Current (Id): 82 A @ 25°C
Input Capacitance (Ciss): 3775 pF @ 50 V
Power Dissipation (Ptot): 238 W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with high-frequency, high-current, and high-voltage switching applications
Application Areas
DC-DC converters
Motor drives
Power management systems
Industrial and consumer electronics
Product Lifecycle
Currently available
No indication of discontinuation
Key Reasons to Choose This Product
Excellent thermal and electrical performance for high-efficiency power conversion
Compact and space-saving design for high power density
Extremely low on-resistance for low conduction losses
Optimized for high-frequency, high-current, and high-voltage switching applications
PSMN012-100YS115Freescale / NXP Semiconductors