Manufacturer Part Number
PMEG4010ESBYL
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Schottky Diode
Product Features and Performance
Fast Recovery (Reverse Recovery Time ≤ 2.9 ns)
Low Forward Voltage Drop (610 mV @ 1 A)
Low Reverse Leakage Current (40 μA @ 40 V)
High Operating Temperature (150°C Max)
Low Capacitance (22 pF @ 10 V, 1 MHz)
Product Advantages
Efficient power conversion
Reduced power dissipation
Compact size for space-constrained designs
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 40 V
Current Average Rectified (Io): 1 A
Voltage Forward (Vf) (Max) @ If: 610 mV @ 1 A
Reverse Recovery Time (trr): 2.9 ns
Capacitance @ Vr, F: 22 pF @ 10 V, 1 MHz
Operating Temperature Junction: 150°C (Max)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount (2-XDFN Package)
Application Areas
Power Conversion Circuits
Freewheeling Diodes
Rectifiers
Switch-Mode Power Supplies
Product Lifecycle
Current production, no known discontinuation plans
Key Reasons to Choose This Product
Fast switching speed for efficient power conversion
Low forward voltage drop for reduced power dissipation
Small package size for space-constrained designs
High operating temperature capability
Compliance with RoHS regulations for environmentally-friendly use